At the Pacifico Yokohama North, Axcelis will anchor its presence at Booth #F3. Beyond the exhibition floor, company technologists are set to deliver technical presentations focused on the nuances of SiC manufacturing. Key sessions will cover the suppression of stacking fault expansion in epitaxial layers, n-type contact engineering, and the manufacturability of 1200V SiC superjunction pillars. These presentations highlight the specific role of high-energy channeling ion implantation in optimizing MOSFET performance.
Axcelis to Detail Silicon Carbide Advancements at ICSCRM 2026
Axcelis Technologies is heading to Yokohama for the 23rd International Conference on Silicon Carbide and Related Materials, scheduled for September 28 through October 2. The Beverly-based semiconductor supplier plans to showcase its ion implantation expertise as the global market for silicon carbide devices eyes an $11 billion valuation by 2031.
Dr. Russell Low, President and CEO, emphasized the strategic importance of the event, positioning the company’s Purion Power Series+ platform as a response to the rapid expansion of the power device sector. With Yole Group projecting a 20% compound annual growth rate for the SiC market through 2031, the company aims to solidify its role in the industry’s critical process steps. The conference serves as a primary venue for Axcelis to demonstrate how its current process control technologies align with the evolving requirements of power device manufacturers.
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